| 摘要 |
PURPOSE: A capacitor of a semiconductor device and a method for manufacturing the same are provided to prevent short due to hemispherical polysilicon crystal by forming selectively the hemispherical polysilicon crystal at a cylindrical lower electrode having different area. CONSTITUTION: A capacitor comprises the first lower electrode(108), the second lower electrode(109), a dielectric film, and an upper electrode. At this time, the first lower electrode(108) is relatively wider area compared to the second lower electrode(109). Therefore, a hemispherical polysilicon crystal(110) is formed on inner portions of the first lower electrode(108) and formed on entire surface of the second lower electrode(109).
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