CAPACITOR OF SEMICONDUCTOR DEVICE INCLUDING ANTI-OXIDATION LAYER AND FABRICATING METHOD THEREFOR

摘要

PURPOSE: A capacitor of a semiconductor device including an anti-oxidation layer and a fabricating method therefor are provided to prevent the oxidation of a contact plug by forming the anti-oxidation layer between a storage electrode and the contact plug. CONSTITUTION: A capacitor of a semiconductor device including an anti-oxidation layer includes a conductive contact plug(300), a storage electrode, an anti-oxidation layer(400), a dielectric layer(700), and a plate electrode(800). The conductive contact plug(300) is formed on an upper surface of a semiconductor substrate(100). The storage electrode is electrically connected to the conductive contact plug(300). The anti-oxidation layer(400) is used for insulating a boundary between the storage electrode and the conductive contact plug(300) and preventing the oxidation of the conductive contact plug(300). The dielectric layer(700) is formed on the storage electrode. The plate electrode(800) is formed on the dielectric layer(700).