发明名称 |
PROCESS FOR MACHINING THIN SILICON WAFER |
摘要 |
PURPOSE: To provide a process for machining a single crystal wafer into a thin silicon wafer 1 in which cracking, or the like, starting from the tapered peripheral can be prevented while facilitating handling of the silicon wafer. CONSTITUTION: A plurality of silicon wafers 1 having a bevel 2 at the peripheral part are stacked and the bevels 2 at the peripheral part are ground collectively. Subsequently, the surface of individual silicon wafers is back ground to produce a thin silicon wafer 10.
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申请公布号 |
KR20040002595(A) |
申请公布日期 |
2004.01.07 |
申请号 |
KR20030039032 |
申请日期 |
2003.06.17 |
申请人 |
SHINKO ELECTRIC INDUSTRIES CO., LTD. |
发明人 |
MASHINO NAOHIRO |
分类号 |
H01L21/304;B24B1/00;B24B7/22;B24B9/00;H01L21/02;H01L21/302;H01L21/68;H01L21/683;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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