| 摘要 |
PURPOSE: A method for forming a storage node of a semiconductor device is provided to prevent a storage node contact plug from being oxidized in a subsequent process by forming the storage node contact plug of a dual structure of RuOx and Ru. CONSTITUTION: The first interlayer dielectric(13) with a landing plug(15) is formed on a semiconductor substrate(11). The second interlayer dielectric(17) with a storage node contact hole is formed on the resultant structure. After a Ti/TiN layer is formed on the resultant structure by a predetermined thickness, a heat treatment process is performed to form a TiSix layer on an interface of the Ti/TiN layer. The first Ru layer(21) is formed on the resultant structure while the storage node contact hole is filled. A predetermined thickness of the first Ru layer is oxidized to form a RuOx layer(23) wherein even a part of the storage node contact hole is oxidized. A chemical mechanical polishing(CMP) process is performed on the RuOx layer to form the storage node contact plug composed of a Ti layer, a TiN layer, the first Ru layer and the RuOx layer. A core insulation layer(25) for exposing a part reserved for the storage node(28) is formed. The second Ru layer is formed by a predetermined thickness. A photoresist layer is formed on the second Ru layer. The photoresist layer and the second Ru layer are blanket-etched to form the storage node. The photoresist layer is eliminated.
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