| 摘要 |
PURPOSE: A dual damascene etching method of a semiconductor device is provided to be capable of improving the burial characteristic of a via hole and preventing the generation of loss at the upper portion of the via hole when carrying out the following trench etching process by using a double organic BARC(Bottom Anti-Reflective Coating). CONSTITUTION: After sequentially forming a diffusion barrier(13) and a low dielectric constant interlayer dielectric(14) at the upper portion of a semiconductor substrate(11) having a lower metal line(12), a via hole is formed at the resultant structure by selectively etching the interlayer dielectric. The first and second organic BARCs(17,18) having a different viscosity with each other, are sequentially formed at the upper portion of the resultant structure for filling the via hole.
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