METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of preventing the reduction of photo process margin by removing an unwanted layer remaining at a photoresist pattern using an etching process. CONSTITUTION: A lower metal line(201) is formed at the upper portion of a substrate(200). After forming an interlayer dielectric(203) on the entire surface of the resultant structure, a photoresist pattern(204a) is formed at the upper portion of the interlayer dielectric. An unwanted layer around the photoresist pattern, is removed by carrying out the first etching process using the photoresist pattern as an etching mask. A via hole(205) is formed at the interlayer dielectric by carrying out the second etching process until the lower metal line is exposed.