| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to prevent misalignment in an N-well mask process and a P-well mask process by additionally forming an oxide layer before a photoresist pattern is formed and by forming an undoped polysilicon layer after the photoresist pattern is removed. CONSTITUTION: An oxide layer is formed on a semiconductor substrate(100) with an isolation layer(200). A P-well mask for forming a P-well(500) is formed on the oxide layer. The oxide layer exposed by the P-well mask is eliminated to form an oxide layer pattern exposing the substrate and the isolation layer under the eliminated oxide layer. Ions are implanted into the substrate to form the P-well by using the P-well mask. The P-well mask is removed. An undoped polysilicon layer is formed on the substrate. A planarization process is performed to expose the oxide layer pattern. The oxide layer pattern is removed to form a polysilicon layer pattern. An ion implantation process using the polysilicon layer pattern as an N-well mask is performed to form an N-well(700). A gate electrode and a source/drain region are formed on the substrate.
|
