| 摘要 |
PURPOSE: A method for fabricating a metal interconnection of a semiconductor device is provided to easily eliminate the residue generated in a process for forming the metal interconnection by forming the metal interconnection in two steps. CONSTITUTION: An interlayer dielectric(23) including a tungsten plug(25) is formed on a silicon substrate(21) having a predetermined underlying layer. A diffusion barrier layer(27), the first metal layer(29) and the first anti-reflective coating(ARC)(31) are sequentially formed on the contact plug and the interlayer dielectric. The first photoresist layer pattern for defining the first metal interconnection formation region is formed on the first ARC. The first ARC, the first metal layer and the diffusion barrier layer are etched to form the first metal interconnection(33) in contact with the tungsten plug by using the photoresist layer pattern as an etch barrier. The first photoresist layer pattern is removed. An oxide layer(41) is deposited to cover the first metal interconnection. The oxide layer is polished to expose the first metal interconnection. The second metal layer(35) and the second ARC(37) are formed on the oxide layer and the first metal interconnection. The second photoresist layer pattern for defining the second metal interconnection formation region is formed on the second ARC. The second ARC and the second metal layer are etched to form the second metal interconnection(39) in contact with the first metal interconnection by using the second photoresist layer pattern as an etch barrier. The second photoresist layer pattern is removed.
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