| 摘要 |
PURPOSE: An inductor is provided to guarantee more windings of an inductor in a small area by forming an inductor of a shallow trench isolation structure in a process for fabricating a high integrated semiconductor device not greater than 0.25 micrometer. CONSTITUTION: A plurality of trenches(24) of a predetermined depth are formed at regular intervals in a semiconductor substrate. An impurity region is formed in the surface of the semiconductor substrate on both side surfaces of each trench and on the bottom surface of each trench. The first insulation layer(26) is formed in each trench. The second insulation layer(27) having the first contact hole is formed on the front surface of the semiconductor substrate to expose the impurity region at both sides of the first insulation layer. A plurality of the first conductive lines are formed on the second insulation layer on the first insulation layer, connected to the impurity region through the first contact hole. A plurality of the second conductive lines are formed to electrically connect the one side with the other side of the adjacent first conductive lines.
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