METHOD FOR MINIMIZING LOCAL INTERCONNECTION SPACE USING DAMASCENE IN FABRICATING STATIC RANDOM ACCESS MEMORY DEVICE

摘要

PURPOSE: A method for minimizing a local interconnection space using damascene in fabricating a static random access memory(SRAM) device is provided to guarantee a design rule margin by separating a damascene process for forming a metal local interconnection into two steps while the metal interconnection is not influenced by a pattern. CONSTITUTION: The first interlayer dielectric is formed on a semiconductor substrate(11). The first and second contact plugs(15a,15b) are formed in the first interlayer dielectric, separated from each other by a predetermined interval. An etch stop layer(17) and the second interlayer dielectric are formed on the resultant structure including the first and second contact plugs. The first trench exposing the first contact plug is formed in the second interlayer dielectric. The first metal interconnection(25) is formed in the first trench. The second interlayer dielectric is selectively removed to form the second trench exposing the second contact plug. The second metal interconnection(31) is formed in the second trench.