| 摘要 |
PURPOSE: A method for manufacturing a semiconductor flash memory device is provided to be capable of reducing cell size, simplifying manufacturing processes, and improving reproducibility. CONSTITUTION: A tunnel oxide layer(202), a floating gate conductive layer(204), a buffer oxide layer(206), and a pad mask(208) are sequentially deposited at the upper portion of a semiconductor substrate(200). After patterning the pad mask, a spacer(210) is formed at both sidewalls of the pad mask. Then, a trench(212) is formed by sequentially etching the buffer oxide layer, the floating gate conductive layer, the tunnel oxide layer, and the semiconductor substrate using the pad mask and the spacer as an etching mask.
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