METHOD FOR MANUFACTURING FERROELECTRIC MEMORY DEVICE

摘要

PURPOSE: A method for manufacturing a ferroelectric memory device is provided to prevent degradation of a capacitor by connecting an upper electrode to a metal line irrespective of the size of contact hole. CONSTITUTION: The first noble metal film(25), a ferroelectric film(26) and the second noble metal film(27) are sequentially formed on a semiconductor substrate(21). After forming an interlayer dielectric(30) on the resultant structure, a contact hole is formed to expose the second noble metal film(27). The first metal film(29) is filled into the contact hole. A capacitor is then formed by patterning the second noble metal film, the ferroelectric film and the first noble metal film. Then, a diffusion barrier layer(31) and a metal line(32) are sequentially formed to connect the first metal film.