| 摘要 |
PURPOSE: A method for manufacturing a high voltage device is provided to be capable of improving short channel effect. CONSTITUTION: A gate electrode(35a) and a gate cap insulating layer are sequentially formed at the upper portion of an epitaxial layer(32). The second conductive type well(39) is formed at both sides of the gate electrode in the epitaxial layer. The first spacer(40) is formed at both sidewalls of the gate electrode. The first conductive type impurity region(41) is formed at the upper portion of the second conductive type well by using the first spacer as a mask. After forming the second spacer(42) at the lateral portion of the first spacer, the second conductive impurity region(43) is formed at the lower portion of the first conductive impurity region by using the second spacer as a mask.
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