| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of preventing a plate electrode of a cell region from being punched. CONSTITUTION: A plurality of word lines(22) and bit lines(24) are formed at a cell region and a peripheral region of a semiconductor substrate(21), respectively. After forming the first interlayer dielectric on the entire surface of the resultant structure for enclosing the word and bit lines, the first and second trench are formed by selectively etching the first interlayer dielectric. A storage node(27a) and a buffer storage pattern(27b) are formed at the first and second trench, respectively. A capacitor is completed by sequentially forming a dielectric layer(28) and a plate electrode(29) at the upper portion of the cell region. After forming the second interlayer dielectric at the upper portion of the resultant structure, the first and second contact hole are formed by selectively etching the first and second interlayer dielectric. A plurality of metal lines(32,33) are formed at the first and second contact hole.
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