| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to be capable of increasing the sensing margin of a DRAM(Dynamic Random Access Memory), improving the degree of integration, and minimizing the leakage current between cells. CONSTITUTION: The first and second trench are formed at a DRAM cell region, and a logic and peripheral region of a semiconductor substrate(11), respectively. The first and second isolation layer(15a,15b) are formed at the first and second trench, respectively. The first isolation layer of the first trench is partially removed. An oxide layer(21) is selectively formed at the upper portion of the resultant structure. After forming a polysilicon layer at the upper portion of the oxide layer, a capacitor plate electrode(23a) and a gate electrode(23b) are formed by selectively patterning the polysilicon layer.
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