| 摘要 |
PURPOSE: A method for fabricating a metal interconnection of a semiconductor device is provided to form a contact hole having a predetermined characteristic by forming polymer on a photoresist pattern formed by a contact mask for metal interconnection and by forming the contact hole through an etch process using the polymer. CONSTITUTION: A capacitor including a plate electrode(11) is formed on a semiconductor substrate having a lower insulation layer. An interlayer dielectric(13) is formed on the resultant structure. The photoresist pattern(15) for metal interconnection contact is formed on the interlayer dielectric. The polymer(17) is formed on the photoresist pattern. The interlayer dielectric is etched to form a metal interconnection contact hole by using the photoresist pattern as a mask.
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