| 摘要 |
PURPOSE: A CMP(Chemical Mechanical Polishing) method of a semiconductor device is provided to be capable of improving topology by using predetermined slurry containing an addition agent when carrying out a CMP process. CONSTITUTION: A CMP process is carried out at a polish object layer(2) by using predetermined slurry containing an additive(3). At this time, the additive is used for removing the step difference of the polish object layer. Preferably, the additive is used for protecting the polish object layer at the predetermined pressure, or less. Preferably, the additive is used for polishing the polish object layer at the predetermined pressure, or higher. Preferably, various additives are used according to the kind of the polish object layer.
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