| 摘要 |
PURPOSE: A method for forming an MIM(Metal Insulator Metal) capacitor of a semiconductor device is provided to be capable of restraining the damage of a lower copper electrode and the generation of copper polymers when etching an upper electrode of the capacitor. CONSTITUTION: A lower electrode(2) is formed at the inner portion of an interlayer dielectric(1) by carrying out a damascene process. The first insulating layer is formed on the entire surface of the resultant structure. After forming a photoresist pattern at the upper portion of the resultant structure, the first insulating layer is selectively etched by using the photoresist pattern as an etching mask for exposing the lower electrode. Then, the photoresist pattern is removed. The second insulating layer(5) and an upper electrode material layer(6) are sequentially formed on the entire surface of the resultant structure. After selectively etching the upper electrode material layer and the second insulating layer, an MIM capacitor is completed by removing the first insulating layer.
|
