| 摘要 |
PURPOSE: A method for reducing charging damage by using a metal dummy pattern is provided to be capable of preventing the excitation of electron-hole pairs at a silicon substrate and inducing the accumulation of particles to the metal dummy pattern through a plug. CONSTITUTION: After forming a gate(23) at the upper portion of a semiconductor substrate(21), the first interlayer dielectric(27) is formed at the upper portion of the resultant structure. After forming the first contact hole(29) at the first interlayer dielectric, the first conductive plug(31) is formed in the first contact hole. The first metal line(33) connected with the first conductive plug and the first metal dummy pattern(35) are formed at the upper portion of the resultant structure. After forming the second interlayer dielectric(37) at the upper portion of the resultant structure, the second and third contact holes are simultaneously formed at the second interlayer dielectric for exposing the first metal line and the first metal dummy pattern. After forming the second and third conductive plugs(41a,41b) in the second and third contact holes, the second metal line(43) and the second metal dummy pattern(45) are formed at the upper portion of the resultant structure.
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