| 摘要 |
PURPOSE: A method for detecting an end point of a CMP(Chemical Mechanical Polishing) process is provided to be capable of obtaining exact end point by using abrupt change of resistance. CONSTITUTION: A silicon oxide layer(6), a barrier(5), and a metal layer(4) are sequentially formed at the upper portion of a substrate(7). The substrate is loaded at a wafer carrier(2). Then, the wafer carrier is moved to the upper portion of a polishing pad(1) for carrying out a CMP process at the metal layer of the substrate. At this time, an I-V measuring part(3) is connected to the metal layer for detecting the end point of the CMP process by measuring the voltage and current of the metal layer. As progressing the CMP process, the metal layer becomes thinner. In the end, the metal layer is completely removed by the CMP process and the current of the metal layer is abruptly changed. Then, the CMP process is finished.
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