METHOD OF CORRECTING PATTERN OF PHOTOMASK

摘要

PURPOSE: A method of correcting pattern of a photomask is provided to prevent defects of the photomask pattern. CONSTITUTION: A number of photomask samples are made under various conditions, by changing the kind and thickness of the pattern material and photomask substrate respectively(s1). According to each condition, a registration information about the pattern formed on each photomask is produced(s2). Field photomask is produced such that the size of the pattern to be formed on the photomask is adjusted according to the registration information of the sample(s3).