| 摘要 |
PURPOSE: A method for fabricating a transistor is provided to prevent nitrogen ions from being out-diffused, by implanting the nitrogen ions after the first insulation layer is formed on a semiconductor substrate including a gate electrode, by forming the second insulation layer on the first insulation layer and by forming a spacer of the first and second insulation layers on the sidewall of the gate electrode. CONSTITUTION: A gate electrode(35) is formed on the semiconductor substrate(31) of the first conductivity type by interposing a gate insulation layer. Low density impurity ions of the second conductivity type are implanted into the front surface of the resultant structure to form the first impurity region(37) in the semiconductor substrate at both sides of the gate electrode. The first insulation layer is formed on the resultant structure including the gate electrode. Nitrogen ions(41) are implanted into the front surface of the resultant structure. The second insulation layer is formed on the first insulation layer. The first and second insulation layers are etched back to form the spacer on the sidewall of the gate electrode. High density impurity ions of the second conductivity type are implanted to form the second impurity region by using the gate electrode and the spacer as a mask. A source/drain impurity region of a lightly-doped-drain(LDD) structure is formed in the semiconductor substrate at both sides of the gate electrode by using the first and second impurity regions.
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