| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to compensate for etch damage of a gate oxide layer without a selective thermal oxide process and avoid a contact between a nitride spacer and a semiconductor substrate by forming a metal gate electrode is formed on the substrate and by performing an annealing process after a SiO2 layer is formed as a barrier layer of the metal gate electrode on the substrate at a low temperature through an atomic layer deposition(ALD) method. CONSTITUTION: The metal gate electrode having a hard mask layer(41) in its upper portion is formed on the semiconductor substrate(31) by interposing the gate oxide layer(33). The SiO2 layer(43) is formed on the substrate including the metal gate electrode at a low temperature through an ALD method. A heat treatment process is performed on the SiO2 layer in an atmosphere of N2. The SiO2 layer has a thickness of 30-70 angstrom, deposited at a temperature from a room temperature to 250 deg.C.
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