| 摘要 |
PURPOSE: A method for fabricating an isolation layer of a semiconductor device is provided to improve an electrical characteristic by forming a trench by a dry etch process and by rounding the corner of the trench by an additional wet etch process. CONSTITUTION: A pad oxide layer and a pad nitride layer are formed on a semiconductor substrate(100). The pad nitride layer, the pad oxide layer and the substrate are dry-etched to form the trench. The trench is wet-etched. An isolating oxide layer(600) is formed to fill the trench. The isolating oxide layer is planarized to expose the pad nitride layer. The pad nitride layer is eliminated.
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