ELECTRON-BEAM COLUMN AND ELECTRON-BEAM LITHOGRAPHY PROCESS USING THE SAME

摘要

PURPOSE: An electron-beam lithography process using an electron-beam column is provided to make the electrons or secondary electrons scattered from the surface of a mask or wafer absorbed to the wall of a chamber by depositing conductive metal or conductive polymer on the inner wall of the chamber and by applying an outside voltage to the chamber in an electron-beam lithography process. CONSTITUTION: Electron beams are irradiated from an electron gun. The irradiated electron beams pass through an objective lens(110). The electron beams reach the surface of the mask or wafer(132) placed in the chamber(130) to which the outside voltage is applied wherein a conductive material is deposited on the inner wall of the chamber.