| 摘要 |
PURPOSE: A method for forming a copper interconnection of a semiconductor device is provided to be capable of preventing diffusion and oxidation of copper. CONSTITUTION: An interlayer dielectric(22) is formed on a semiconductor substrate(21). Damascene pattern is formed by selectively etching the first interlayer dielectric. By forming a diffusion barrier layer(23) on the resultant structure and exposing air, oxygen is diffused to grain boundaries of the diffusion barrier layer. After forming an aluminum film(24) and a seed layer(25) on the resultant structure, a copper film(26) is filled into the damascene pattern. After polishing the resultant structure using CMP, an alumina diffusion barrier layer(23A) is formed at grain boundaries of the diffusion barrier layer(23) due to diffusion of aluminum and an aluminum oxide layer(27) is formed on the copper film by annealing.
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