| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to avoid deterioration of a gate oxide layer in a dynamic random access memory(DRAM) cell part and prevent channel control ions generated in a peripheral part from being re-distributed by forming a gate electrode on the gate oxide layer and by increasing the thickness of the gate oxide layer only on a cell part by a thermal oxide process using a liner nitride layer in the peripheral part as a mask. CONSTITUTION: The first gate oxide layer(43) is formed on a semiconductor substrate(41) where the DRAM cell part is defined. The gate electrode(45) having a hard mask layer(47) in its upper portion is formed on the first gate oxide layer. A source/drain region(49) is formed on the semiconductor substrate at both sides of the gate electrode. The first liner nitride layer(51) is formed on the resultant structure. The first liner nitride layer in the DRAM cell part is etched by a photolithography process using a mask having a light transmission part. The second gate oxide layer(53) is grown on the first gate oxide layer and the gate electrode in the exposed DRAM cell part to form a dual gate oxide layer by a thermal oxide process using the first liner nitride layer as a mask. The second liner nitride layer is formed on the resultant structure including the second gate oxide layer.
|
