| 摘要 |
PURPOSE: A method for forming an interlayer dielectric of a semiconductor device is provided to reduce dielectric constant by substituting Si-F combination for Si-OH or Si-H combination which is the main reason of the increase of the dielectric constant inside the interlayer dielectric. CONSTITUTION: SiH4 gas and a relatively small quantity of SiF4 gas are used as source gas to form an interlayer dielectric. The interlayer dielectric is formed by a high density plasma chemical vapor deposition(HDPCVD) method, and composed of a low-k material.
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