| 摘要 |
PURPOSE: A method for manufacturing a semiconductor flash memory cell is provided to prevent defects due to gettering effect of dopants and to effectively restrain TED(Transient Enhanced Diffusion). CONSTITUTION: A tunnel oxide layer(114), a floating gate(116), a dielectric film(118), a control gate(120) and an anti-reflective coating layer(124) are sequentially formed on a semiconductor substrate(100). By using self-aligned source etching, an isolation layer located at a common source line forming region is etched. The first dopant and the second dopant having a relatively small mass are sequentially implanted into the common source line forming region, thereby forming a common source line(132). A source(130) and a drain(134) are formed by implanting the third dopant same to the first dopant.
|
