| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of minimizing attacks of a lower layer, improving uniformity and minimizing defects. CONSTITUTION: An insulating layer(25) having an opening part is formed on a semiconductor substrate(21). A polysilicone layer is sufficiently filled into the opening part. A main etching step is performed to partially etch the polysilicone layer by ACE(Advanced Chemical Etching) using mixed chemicals of HF, HNO3 and DI(Deionized) water. An over-etching step is then performed to planarize the polysilicone layer by ACE using mixed chemicals of HF, HNO3 and DI water, thereby forming a plug(27).
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