| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to be capable of removing the step difference between an active region and an isolation region and restraining the generation of a micro-trench. CONSTITUTION: A pad oxide layer(200a) and a nitride layer(300a) are sequentially formed at the upper portion of a semiconductor substrate(100a). A trench(400) is formed by selectively etching the resultant structure. The first oxide layer(500) is formed on the entire surface of the resultant structure for completely filling the trench. The second oxide layer(600) is formed at the upper portion of the first oxide layer for improving the topology of the first oxide layer. A CMP(Chemical Mechanical Polishing) process is carried out at the second and first oxide layer for exposing the nitride layer. Preferably, an SOG(Spin On Glass) oxide layer is used as the second oxide layer.
|
