| 摘要 |
PURPOSE: An exposure method using a reticle is provided to be capable of restraining the failure of CD(Critical Dimension) uniformity for improving the CD uniformity of wafer field. CONSTITUTION: After forming a photoresist layer at the upper portion of a wafer, a reticle and an additional mask(20) is prepared. At this time, the reticle is completed by forming a chrome layer at the upper portion of a transparent substrate. At the time, the additional mask is used for transmitting light to the field peripheral portion of the reticle. The first exposure is carried out at the photoresist layer by using the reticle for forming an aiming circuit pattern. The second exposure is carried out at the predetermined peripheral portion of the photoresist layer by using the additional mask. Then, a baking and a developing process are carried out at the photoresist layer.
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