| 摘要 |
PURPOSE: A method for manufacturing an ESD(ElectroStatic Discharge) transistor is provided to be capable of preventing the generation of ESD defect due to the damage of a gate oxide layer of an input buffer. CONSTITUTION: The first photoresist pattern is formed at the upper portion of a silicon substrate(20). A plurality of P type impurity junction regions(28) are formed at the inner portion of the silicon substrate by implanting P type ions into the resultant structure. After removing the first photoresist pattern, the second photoresist pattern(30) is formed at the upper portion of the resultant structure. A plurality of N+ type impurity junction regions(34) are formed between the P type impurity junction regions by implanting N+ type ions(32) into the resultant structure. An annealing process is carried out at the resultant structure for activating the N+ type ions.
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