| 摘要 |
PURPOSE: A method for forming a contact hole is provided to be capable of securing contact hole margin and simplifying forming processes by increasing the etching selectivity ratio of a barrier metal of a lower metal line. CONSTITUTION: A plurality of lower metal lines are formed at the upper portion of a semiconductor substrate(100), wherein each lower metal line is made of an aluminium layer(102) and a barrier metal(105). An interlayer dielectric(110) is formed on the entire surface of the resultant structure. A contact hole(111) is formed at the interlayer dielectric by carrying out a photolithography process. At this time, the barrier metal remains at the bottom portion of the contact hole by increasing the etching selectivity ratio of the barrier metal. Preferably, a TiN layer is used as the barrier metal.
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