| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to guarantee a process margin for a photolithography process by implanting and hardening impurity ions into a photoresist pattern in the process for forming a concave storage node of a high aspect ratio. CONSTITUTION: An interlayer dielectric(33) including a storage node contact plug(35) is formed on a semiconductor substrate(31). A stack structure of an etch barrier layer(37) and a core insulation layer(39) is formed on the interlayer dielectric. A thin film for a hard mask is formed on the core insulation layer. The photoresist pattern(43) is formed on the thin film for the hard mask, exposing a portion reserved for a storage node. Impurity ions are implanted into the photoresist pattern before the photoresist pattern is hardened. The thin film for the hard mask is etched to form a thin film pattern(42) for the hard mask by using the hardened photoresist pattern as an etch mask. The stack structure is etched to form a trench(45) exposing the storage node contact plug by using the photoresist pattern and the thin film pattern for the hard mask as an etch mask.
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