| 摘要 |
PURPOSE: A method for fabricating a storage node of a semiconductor device is provided to prevent a bridge between storage nodes and improve capacitance by broadening the upper portion of the storage node and by forming hemispherical silicon on the upper portion and the side surface of the storage node after the storage nodes are isolated. CONSTITUTION: An interlayer dielectric having a storage node contact hole is formed on a semiconductor substrate(41) including a predetermined lower structure. A conductive layer is formed on the resultant structure. An etch barrier layer and a core insulation layer are formed on the conductive layer. The core insulation layer, the etch barrier layer and the conductive layer are etched to form a stack structure of a storage node contact plug(56), an etch barrier pattern(58) and a core insulation pattern through a photolithography process using a storage node mask that protects a portion reserved for the storage node(63). The storage node connected to the storage node contact plug is formed on the upper portion and the sidewall of the stack structure.
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