| 摘要 |
PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to prevent crack in the capacitor or leakage current caused by stress in a subsequent process, by depositing a TiN layer as a conductive layer for an upper electrode through a chemical vapor deposition(CVD) process, by forming a polycrystalline silicon layer having an excellent filling characteristic and by depositing a TiN layer on the polycrystalline silicon layer by a physical vapor deposition(PVD) process. CONSTITUTION: An interlayer dielectric(22) including a storage node contact plug(23) is formed on a semiconductor substrate(21). A core insulation layer(24) is formed on the resultant structure. The core insulation layer is etched to expose the storage node contact plug by a photolithography process using a storage node mask. A storage node(25) is connected to the storage node contact plug. A dielectric layer(26) is formed on the resultant structure. A metal layer(27) for the first upper electrode is formed on the dielectric layer by a CVD method. A polycrystalline silicon layer is formed on the metal layer for the first upper electrode. A metal layer(28) for the second upper electrode is formed on the polycrystalline silicon layer by a PVD method.
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