| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to prevent abnormal oxidation and contamination of equipment by forming a metal gate electrode including a tungsten layer surrounded by a Ti/TiN layer. CONSTITUTION: A gate insulation layer, the first conductive layer and the first insulation layer are formed on a semiconductor substrate(31). The first insulation layer is etched to form a groove by a photolithography process using a mask having a light transmission part in a gate electrode formation portion only. The second conductive layer is formed on the first insulation layer including the groove. A metal layer having an intermediate thickness from the bottom of the groove is formed on the second conductive layer in the groove. The second insulation layer and the second conductive layer are blanket-etched by using the first insulation layer as an etch barrier layer. The first insulation layer is eliminated. The first conductive layer is etched to form the metal gate electrode by using the second insulation layer as a mask.
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