| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to control an increase of a diameter of a bitline contact hole in eliminating a native oxide layer under the bitline contact hole through a contact cleaning process by forming a silicon nitride layer spacer having strong resistance regarding oxide layer etchant on the inner wall of the bitline contact hole before the contact cleaning process. CONSTITUTION: An interlayer oxide layer(33) including the bitline contact hole is formed on a substrate(31). A nitride layer spacer(37) is formed on the inner wall of the bitline contact hole. A natural oxide layer on the bottom of the bitline contact hole is eliminated through a cleaning process. The nitride layer spacer is removed. A conductive layer is formed on the bitline contact hole and the interlayer oxide layer. The conductive layer is etched to form a bitline through a photolithography process using a bitline mask.
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