METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of preventing attacks of a bit line due to wet-cleaning. CONSTITUTION: A bit line contact hole(43) is formed to expose a substrate(40) by selectively etching the first insulating layer(42). A conductive layer(45) is filled into the contact hole. A nitride hard mask(46) is formed on the conductive layer by using PECVD(Plasma Enhanced CVD). A fluidity insulating layer(47) is deposited on the nitride hard mask so as to improve topology and to prevent attacks of the conductive layer due to wet-cleaning. A bit line pattern is then formed by selectively etching the fluidity insulating layer, the nitride hard mask and the conductive layer. After forming the second insulating layer on the resultant structure, a plurality of contact plugs as storage nodes are formed. Wet-cleaning is then performed to remove defects.