METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE CAPABLE OF RESTRAINING PUNCH

摘要

PURPOSE: A method for manufacturing a semiconductor device capable of restraining punch is provided to be capable of restraining punch due to attacks of a lower layer without alteration the steps of processing. CONSTITUTION: A plug(44) is formed on a substrate(40) through the first insulating layer(41), the first etch stop layer(42) and the second insulating layer(43). The second etch stop layer(45) is formed on the plug(44). The third insulating layer(46) is formed on the second etch stop layer. An opening part(48) is formed to protrude the plug by selectively etching the third insulating layer, the second etch stop layer and the second insulating layer using the first etch stop layer as a stopper.