| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device by restraining junction leakage is provided to improve reliability by restraining junction leakage generated at edges of an active region. CONSTITUTION: A field insulating layer(12) is formed at a silicon substrate(10) for defining an active and inactive region. A portion of the field insulating layer(12) adjacent to the active region is selectively removed. A source/drain region(20) is then formed in the active region of the silicon substrate(10) by ion-implantation. At this time, the source/drain region further includes a band-down profile(20A) located at an edge portion of the active region.
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