METHOD FOR MANUFACTURING CAPACITOR

摘要

PURPOSE: A method for manufacturing a capacitor is provided to be capable of easily controlling the etching condition of a capacitor oxide layer and restraining junction failure. CONSTITUTION: The first insulating layer(39) is formed on a semiconductor substrate(31). A storage node contact is formed to connect the substrate through the first insulating layer. The second insulating layer(43) of triple structure including the first oxide layer(43a), an aluminum oxide layer(43b) and the second oxide layer is formed on the resultant structure. An opening is formed to expose the storage node contact by etching the second insulating layer. A lower electrode(44) is formed in the opening. After the second oxide layer are selectively removed, a dielectric film(45) and an upper electrode(46) are sequentially formed.