METHOD FOR FORMING METAL LINE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a metal line of a semiconductor device is provided to be capable of increasing the degree of integration and improving the function of the semiconductor device by using Ag as the material for a metal line. CONSTITUTION: After sequentially forming a lower conductive layer(12) and an interlayer dielectric(14) at the upper portion of a semiconductor substrate(11), a contact hole is formed by partially etching the interlayer dielectric. After forming a tungsten layer at the upper portion of the resultant structure for completely filling the contact hole, a tungsten plug(17P) is formed in the contact hole by etching the tungsten layer. A metal stop nitride layer(18) and an intermetal dielectric(19) are sequentially formed at the upper portion of the resultant structure. A damascene trench is formed by selectively etching the resultant structure for exposing the tungsten plug. Then, an Ag line(21W) is formed at the inner portion of the damascene trench.