| 摘要 |
PURPOSE: A switching point detecting circuit and a semiconductor device using the same are provided stably to maintain the operation of the semiconductor device regardless of the fabrication state of an MOS(Metal Oxide Silicon) transistor. CONSTITUTION: A switching point detecting circuit is provided with a reference voltage generation circuit(10), the first CMOS(Complementary Metal Oxide Semiconductor) inverter(20) for receiving the reference voltage supplied from the reference voltage generation circuit, and the second CMOS inverter(30). At this time, the first dominant part of the first CMOS inverter is an NMOS(N-channel Metal Oxide Semiconductor). At the time, the second dominant part of the second CMOS inverter is a PMOS(P-channel Metal Oxide Semiconductor).
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