| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to enhance the area of an active region and to improve gap-filling property by using SEG(Silicon Epitaxial Growth) processing. CONSTITUTION: A shallow trench is formed at an isolation region of a silicon substrate(10). The first liner nitride layer(11) is formed at inner walls of the shallow trench. After forming an isolation insulating layer on the silicon substrate including the trench, an isolation insulating pattern(12a) is formed by selectively etching the isolation insulating layer. The second liner nitride layer(13a) is then formed at both sidewalls of the isolation insulating pattern(12a). A silicon epitaxial layer(14) grows on an active region of the silicon substrate by SEG.
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