METHOD FOR MANUFACTURING FERROELECTRIC MEMORY DEVICE

摘要

PURPOSE: A method for manufacturing a ferroelectric memory device is provided to be capable of preventing oxidation of a barrier layer in annealing of a ferroelectric film. CONSTITUTION: Interlayer dielectrics(36,39) are formed on a semiconductor substrate(31) having a transistor. A storage node contact is formed to expose a source/drain region(35a,35b) of the transistor through the interlayer dielectrics. An oxygen diffusion barrier layer(42a) and a lower electrode(43a) are sequentially formed to connect the storage node contact. An oxygen attack barrier layer(45a) and an insulating layer(46a) are sequentially formed on the resultant structure. The resultant structure is planarized to expose the surface of the lower electrode. Then, a ferroelectric film(47) and an upper electrode(48) are sequentially formed on the exposed lower electrode.