METHOD FOR FORMING ISOLATION LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to improve gap-filling property and to prevent moat by reducing aspect ratio using an anti-reflective layer instead of a pad nitride layer. CONSTITUTION: A pad oxide layer(201) and an anti-reflective layer(202) are sequentially formed on a semiconductor substrate(200). An isolation region is defined by selectively etching the anti-reflective layer and the pad oxide layer. A trench(203) is formed at the defined isolation region. An isolation layer(204) is formed by filling an insulating layer(204a) on the trench and polishing the insulating layer.