| 摘要 |
PURPOSE: A method for forming a copper interconnection of a semiconductor device is provided to simplify manufacturing processes without using CMP by forming a diffusion barrier layer at sidewalls of a contact hole. CONSTITUTION: The first interlayer dielectric(202) is formed on a semiconductor substrate(201). Damascene pattern is formed by selectively etching the first interlayer dielectric. After filling the first copper film(205) into the damascene pattern, an etch stop layer(206) and the second interlayer dielectric(207) are sequentially formed on the resultant structure. A contact hole is formed to expose the first copper film by selectively etching the second interlayer dielectric and the etch stop layer. A diffusion barrier layer(209) is formed at sidewalls of the contact hole. Then, the second copper film(210) is filled into the contact hole.
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