| 摘要 |
PURPOSE: A method for fabricating a flat display device using MIC/MILC(Metal Induced Crystallization/Metal Induced Lateral Crystallization) is provided to perform simultaneously a crystallization process and a silicide process by using the MIC/MILC process. CONSTITUTION: A semiconductor layer(220) of an amorphous silicon layer is deposited on an insulating substrate(200). A first metal layer is formed on an entire surface of the insulating substrate(200). The semiconductor layer(220) of the amorphous silicon layer is crystallized as the semiconductor layer(220) of a polycrystalline silicon layer by using the first metal layer. A gate insulating layer(230) is deposited on the entire surface of the insulating substrate(200). A gate electrode(235) is formed on the gate insulating layer(230). An interlayer dielectric(240) is formed on the entire surface of the insulating substrate(200). A plurality of contact holes(241,242) are formed by etching the interlayer dielectric(240) and the gate insulating layer(230). A transparent conductive layer(260) and the second metal layer(270) are sequentially formed on the entire surface of the insulating substrate(200). A source/drain electrode and a pixel electrode(265) are simultaneously formed by patterning the transparent conductive layer(260) and the second metal layer(270).
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